MULTICOMP 2N2907 Bipolar (BJT) Single Transistor, PNP, 40 V, 400 mW, 600 mA, 100 hFE Pearstone PL-SYDBL40 Infrared attenuating design eliminates IR

Infrared attenuating design eliminates IR bleed above 700nm

The Misfit Atom 4x5

3/4" dye cut squares Accommodates Gear that needs protection from water and dust Carrying/Transport Options Snap-down cushion grip handle

Gust-Proof Design

MULTICOMP 2N2907 Bipolar (BJT) Single Transistor, PNP, 40 V, 400 mW, 600 mA, 100 hFE Pearstone PL-SYDBL40 Infrared attenuating design eliminates IRThe 2N2907 from Multicomp is a through hole, PNP transistors in TO 18 metal can package. This transistor is suitable for switching and amplification. Collector emitter voltage (Vce) of 40V Continuous collector current (Ic) of 600mA Power dissipation of 400mW Operating junction temperature range from 65C to 200C Collector emitter saturation voltage of 400mV at Ic=150mA DC current gain is greater than 30 at Ic=500mA Applications Power Management,