STMICROELECTRONICS STW4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V Miller DS-10 for optimized viewing conditions

for optimized viewing conditions

It has a minimum attenuation and low VSWR

Enables an Unimpeded Meridian Flip

16mm Connector Type DIP Product Range D28 Series Contact Material Beryllium Copper Pitch Spacing 2

STMICROELECTRONICS STW4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V Miller DS-10 for optimized viewing conditionsThe STW4N150 is a 1500V N channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Intrinsic capacitances and Qg minimized